规格 | 目录价格 | 上海 | 安徽 | 武汉 | 成都 | 北方 | 深圳 | 会员价格 | 数量 |
---|---|---|---|---|---|---|---|---|---|
5g | ¥ ĽǵƓǵǵ | > 0 | > 0 | -- | -- | -- | -- | ¥ ĽǵƓǵǵ | - + |
0g | ¥ ưƞƓǵǵ | > 0 | > 0 | -- | -- | ¥ ưƞƓǵǵ | - + | ||
5g | ¥ ʼnʼnNJƓǵǵ | > 0 | > 0 | -- | -- | -- | ¥ ʼnʼnNJƓǵǵ | - + | |
00g | ¥ ȎȎʼnƓǵǵ | 6 | > 0 | -- | -- | -- | -- | ¥ ȎȎʼnƓǵǵ | - + |
500g | ¥ NJʼnƞŢƓǵǵ | 4 | -- | -- | -- | -- | ¥ NJʼnƞŢƓǵǵ | - + | |
kg | ¥ ȎĽƞʼnƓǵǵ | -- | -- | -- | -- | -- | ¥ ȎĽƞʼnƓǵǵ | - + | |
大货 | 请询价 | -- | -- | -- | -- | -- | -- | -- | - + |
57.5
[]. Adrien Mekki-Berrada, et al. Design of amphoteric mixed oxides of zinc and Group elements (Al, Ga, In): migration effects on basic features. Phys Chem Chem Phys. 0 Mar 8;4():455-6.
[]. Christian A Nijhuis, et al. A molecular half-wave rectifier. J Am Chem Soc. 0 Oct 5;(9):597-4.
[]. Feng Shi, et al. Synthesis and characterization of beta-GaO nanorod array clumps by chemical vapor deposition. J Nanosci Nanotechnol. 0 Nov;():848-6.
[4]. J B Varley, et al. Hydrogenated cation vacancies in semiconducting oxides. J Phys Condens Matter. 0 Aug 4;():4.
[5]. Jae-Hong Jeon, et al. Negative gate bias and light illumination-induced hump in amorphous InGaZnO thin film transistor. J Nanosci Nanotechnol. 0 Nov;():755-9.
H0-H5-H9-H5
P6-P64-P70-P7-P80-P0+P5-P04+P40-P05+P5+P8-P0-P6+P64-P40+P-P405-P50